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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3686 DESCRIPTION With TO-3PN package High breakdown voltage High reliability Fast speed APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg CHA IN Collector current PARAMETER Collector-base voltage E SEM NG Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 1500 800 6 7 16 UNIT V V V A A W ae ae Collector-emitter voltage Emitter-base voltage Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25ae 120 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3686 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A 5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.2A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0 1 mA IEBO Emitter cut-off current VEB=4V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 8 Switching times tstg tf Fall time Storage time CHA IN E SEM NG IC=4A; VCC=5V IB1=0.8A; IB2=-1.6A OND IC TOR UC 3 |I 0.1 0.2 |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3686 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3686 CHA IN E SEM NG OND IC TOR UC 4 |
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